Datasheet > AOL1401_08

AOL1401_08

更新时间： 2024-11-13 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	150K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AOL1401_08 数据手册

AOL1401

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1401 uses advanced trench technology to

provide excellent RDS(ON), and ultra-low low gate

charge with a 25V gate rating. This device is suitable

for use as a load switch or in PWM applications. It is

ESD protected.

V_DS(V) = -38V

I_D= -85A

R_DS(ON)< 8.5mΩ (V_GS= -20V)

R_DS(ON)< 10mΩ (V_GS= -10V)

-RoHS Compliant

-Halogen and Antimony Free Green Device*

ESD Rating: 3000V HBM

Rg,Ciss,Coss,Crss Tested

Ultra SO-8^TMTop View

Bottom tab

connected to

drain

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-38

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

±25

-85

T_C=25°C

T_C=100°C

I_D

-62

Pulsed Drain Current ^C

I_DM

-120

-12

Continuous Drain

Current ^G

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

I_DSM

P_D

-10

100

Power Dissipation ^B

Power Dissipation ^A

2.08

1.3

P_DSM

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

1.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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