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AOL1400L PDF预览

AOL1400L

更新时间: 2024-11-13 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 122K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOL1400L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

AOL1400L 数据手册

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AOL1400  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOL1400 uses advanced trench technology to  
provide excellent RDS(ON), shoot-through immunity and  
good body diode characteristics. This device is ideally  
suited for use as a low side switch in CPU core power  
conversion. Standard product AOL1400 is Pb-free  
(meets ROHS & Sony 259 specifications). AOL1400L  
is a Green Product ordering option. AOL1400 and  
AOL1400L are electrically identical.  
VDS (V) = 30V  
ID = 85A  
(VGS = 10V)  
RDS(ON) < 4.5m(VGS = 10V)  
RDS(ON) < 5.5m(VGS = 4.5V)  
Ultra SO-8TM Top View  
Fits SOIC8  
footprint !  
D
S
D
Bottom tab  
connected to  
drain  
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
30  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current B  
VGS  
±12  
85  
TC=25°C G  
TC=100°C B  
ID  
70  
IDM  
Pulsed Drain Current  
Continuous Drain  
Current G  
200  
17  
A
TA=25°C  
TA=70°C  
IDSM  
IAR  
13  
Avalanche Current C  
30  
A
C
Repetitive avalanche energy L=0.3mH  
EAR  
145  
100  
50  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
TA=25°C  
2.1  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.3  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
21  
48  
1
Max  
25  
60  
Units  
°C/W  
°C/W  
°C/W  
A
t 10s  
Steady-State  
Steady-State  
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
Maximum Junction-to-Case C  
RθJA  
A
RθJC  
1.5  
Alpha & Omega Semiconductor, Ltd.  

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