Datasheet > AOL1400

AOL1400

更新时间： 2024-11-13 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	122K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOL1400 数据手册

AOL1400

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1400 uses advanced trench technology to

provide excellent R_DS(ON), shoot-through immunity and

good body diode characteristics. This device is ideally

suited for use as a low side switch in CPU core power

conversion. Standard product AOL1400 is Pb-free

(meets ROHS & Sony 259 specifications). AOL1400L

is a Green Product ordering option. AOL1400 and

AOL1400L are electrically identical.

V_DS(V) = 30V

I_D= 85A

(V_GS= 10V)

R_DS(ON)< 4.5mΩ (V_GS= 10V)

R_DS(ON)< 5.5mΩ (V_GS= 4.5V)

Ultra SO-8^TMTop View

Fits SOIC8

footprint !

Bottom tab

connected to

drain

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^B

V_GS

±12

T_C=25°C ^G

T_C=100°C ^B

I_D

I_DM

Pulsed Drain Current

Continuous Drain

Current ^G

200

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH

E_AR

145

100

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.1

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

Steady-State

Maximum Junction-to-Ambient

Maximum Junction-to-Case ^C

R_θJA

R_θJC

1.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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