Datasheet > AOL1240

AOL1240

更新时间： 2024-10-02 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	269K
描述
40V N-Channel MOSFET

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AOL1240 数据手册

AOL1240

40V N-Channel MOSFET

General Description

Product Summary

V_DS

40V

The AOL1240 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance.Power losses are

minimized due to an extremely low combination of

R_DS(ON)and Crss.In addition,switching behavior is well

controlled with a "Schottky style" soft recovery body

diode.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

69A

< 3mΩ

< 4.4mΩ

100% UIS Tested

100% R_gTested

UltraSO-8^TM

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

400

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS, I_AR

E_AS, E_AR

211

125

62.5

2.1

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.2

Rev 0: Sep. 2011

www.aosmd.com

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