Datasheet > AOK8N80

AOK8N80

更新时间： 2024-01-30 19:31:21

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	310K
描述
800V,7.4A N-Channel MOSFET

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AOK8N80 数据手册

AOK8N80

800V,7.4A N-Channel MOSFET

General Description

Product Summary

V_DS

900@150℃

7.4A

The AOK8N80 is fabricated using an advanced high

voltage MOSFET process that is designed to deliver high

levels of performance and robustness in popular AC-DC

applications.By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability this part can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 1.63Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOK8N80L

Top View

TO-247

AOK8N80

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOK8N80

Units

Drain-Source Voltage

Gate-Source Voltage

800

±30

7.4

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

4.6

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

3.8

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

217

433

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

245

P_D

Power Dissipation ^B

Derate above 25^oC

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

R_θJA

AOK8N80

Units

°C/W

Maximum Junction-to-Ambient ^A,D

Maximum Case-to-sink ^A

R_θCS

0.5

Maximum Junction-to-Case

R_θJC

0.51

Rev0: Jul 2012

www.aosmd.com

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AOK8N80 替代型号

型号	品牌	替代类型	描述	数据表
AOTF8N80	AOS	功能相似	800V, 7.4A N-Channel MOSFET

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