Datasheet > AOK5N100

AOK5N100

更新时间： 2024-09-25 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	294K
描述
1000V,4A N-Channel MOSFET

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AOK5N100 数据手册

AOK5N100

1000V,4A N-Channel MOSFET

General Description

Product Summary

V_DS

1100@150℃

The AOK5N100 is fabricated using an advanced high

voltage MOSFET process that is designed to deliver high

levels of performance and robustness in popular AC-DC

applications.By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability this parts can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 4.2Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOK5N100L

Top View

TO-247

AOK5N100

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOK5N100

Units

Drain-Source Voltage

Gate-Source Voltage

1000

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

2.5

Pulsed Drain Current ^C

I_DM

2.8

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

117

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

235

V/ns

W/ ^oC

195

P_D

Power Dissipation ^B

Derate above 25^oC

1.6

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

R_θJA

AOK5N100

Units

°C/W

Maximum Junction-to-Ambient ^A,D

Maximum Case-to-sink ^A

0.5

R_θCS

Maximum Junction-to-Case

R_θJC

0.64

Rev0: Jul 2012

www.aosmd.com

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