AOD468/AOI468
300V,11.5A N-Channel MOSFET
General Description
Product Summary
The AOD468 & AOI468 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
350V@150℃
11.5A
VDS
ID (at VGS=10V)
<0.42Ω
R
DS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
TO251A
IPAK
D
Top View
Bottom View
Top View
Bottom View
D
D
G
G
G
S
S
D
S
D
S
S
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
300
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±30
Continuous Drain
CurrentB
Pulsed Drain Current C
Avalanche Current C
TC=25°C
11.5
ID
TC=100°C
8.3
A
IDM
29
3.8
216
430
5
IAR
A
C
Repetitive avalanche energy
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
EAR
EAS
dv/dt
mJ
mJ
V/ns
W
150
PD
Power Dissipation B
Derate above 25oC
1
W/ C
o
-50 to 175
TJ, TSTG
TL
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
Typical
Maximum
Units
°C/W
°C/W
°C/W
45
-
55
0.5
1
RθCS
RθJC
0.7
Rev0: Dec 2010
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