Datasheet > AOI468

AOI468

更新时间： 2024-11-25 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	312K
描述
300V,11.5A N-Channel MOSFET

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AOD468/AOI468

300V,11.5A N-Channel MOSFET

General Description

Product Summary

The AOD468 & AOI468 have been fabricated using an

advanced high voltage MOSFET process that is designed

to deliver high levels of performance and robustness in

popular AC-DC applications.By providing low R_DS(on), C_iss

and C_rssalong with guaranteed avalanche capability these

parts can be adopted quickly into new and existing offline

power supply designs.These parts are ideal for boost

converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

350V@150℃

11.5A

V_DS

I_D(at V_GS=10V)

<0.42Ω

_DS(ON)(at V_GS=10V)

100% UIS Tested!

100% R_gTested!

TO252

DPAK

TO251A

IPAK

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

300

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±30

Continuous Drain

Current^B

Pulsed Drain Current ^C

Avalanche Current ^C

T_C=25°C

11.5

I_D

T_C=100°C

8.3

I_DM

3.8

216

430

I_AR

Repetitive avalanche energy

Single pulsed avalanche energy ^H

Peak diode recovery dv/dt

T_C=25°C

E_AR

E_AS

dv/dt

V/ns

150

P_D

Power Dissipation ^B

Derate above 25^oC

W/ C

-50 to 175

T_J, T_STG

T_L

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

°C

300

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A,G

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

Symbol

R_θJA

Typical

Maximum

Units

°C/W

0.5

R_θCS

R_θJC

0.7

Rev0: Dec 2010

www.aosmd.com

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