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AOI444 PDF预览

AOI444

更新时间: 2024-11-21 12:24:51
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 254K
描述
60V N-Channel MOSFET

AOI444 数据手册

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AOD444/AOI444  
60V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
The AOD444/AOI444 combine advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON). Those devices are suitable for use  
in PWM, load switching and general purpose applications.  
60V  
12A  
ID (at VGS=10V)  
< 60mΩ  
< 85mΩ  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 4.5V)  
100% UIS Tested  
100% Rg Tested  
TO252  
DPAK  
TO-251A  
IPAK  
D
TopView  
Bottom View  
TopView  
Bottom View  
D
D
D
G
S
S
G
G
D
G
S
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
60  
V
VGS  
ID  
IDM  
IDSM  
Gate-Source Voltage  
Continuous Drain  
Current G  
±20  
V
A
TC=25°C  
12  
TC=100°C  
9
Pulsed Drain Current C  
30  
TA=25°C  
TA=70°C  
4
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
A
3
19  
IAS, IAR  
A
EAS, EAR  
18  
mJ  
TC=25°C  
20  
PD  
W
Power Dissipation B  
Power Dissipation A  
TC=100°C  
TA=25°C  
TA=70°C  
10  
2.1  
PDSM  
W
1.3  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
17.4  
50  
Max  
30  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
60  
Steady-State  
Steady-State  
RθJC  
4
7.5  
Rev 0: Aug 2009  
www.aosmd.com  
Page 1 of 6  

AOI444 替代型号

型号 品牌 替代类型 描述 数据表
AOD444 AOS

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