Datasheet > AOI444

AOI444

更新时间： 2024-11-06 12:24:51

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	254K
描述
60V N-Channel MOSFET

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AOI444 数据手册

AOD444/AOI444

60V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOD444/AOI444 combine advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). Those devices are suitable for use

in PWM, load switching and general purpose applications.

60V

12A

I_D(at V_GS=10V)

< 60mΩ

< 85mΩ

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% Rg Tested

TO252

DPAK

TO-251A

IPAK

TopView

Bottom View

TopView

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.1

P_DSM

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

17.4

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

7.5

Rev 0: Aug 2009

www.aosmd.com

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AOI444 替代型号

型号	品牌	替代类型	描述	数据表
AOD444	AOS	功能相似	60V N-Channel MOSFET

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