Datasheet > AOI4185

AOI4185

更新时间： 2024-10-02 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	388K
描述
P-Channel Enhancement Mode Field

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AOI4185 数据手册

AOD4185/AOI4185

P-Channel Enhancement Mode Field

Effect Transistor

General Description

The AOD4185/AOI4185 uses advanced trench technology to provide excellent R_DS(ON)and low gate

charge. With the excellent thermal resistance of the

current applications.

DPAK/IPAK package, this device is well suited for high

Features

V_DS(V) = -40V

I_D= -40A

(V_GS= -10V)

R_DS(ON)< 15mΩ (V_GS= -10V)

R_DS(ON)< 20mΩ (V_GS= -4.5V)

Absolute Maximum Ratings T_C=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-40

Gate-Source Voltage

Continuous Drain

Current ^B,H

Pulsed Drain Current ^C

Avalanche Current ^C

V_GS

±20

-40

T_C=25°C

T_C=100°C

I_D

-31

I_DM

I_AR

E_AR

-115

-42

Repetitive avalanche energy L=0.1mH ^C

°C

T_C=25°C

62.5

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A,G

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A,G

Maximum Junction-to-Case ^D,F

Steady-State

2.4

R_θJC

1/6

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