Datasheet > AOD494

AOD494

更新时间： 2024-09-13 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	133K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD494 数据手册

AOD494

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD494 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge.This device

is suitable for use as a high side switch in SMPS and

general purpose applications. Standard Product

AOD494 is Pb-free (meets ROHS & Sony 259

specifications). AOD494L is a Green Product ordering

option. AOD494 and AOD494L are electrically

identical.

V_DS(V) = 30V

I_D= 55A (V_GS= 10V)

R_DS(ON)<11mΩ (V_GS= 10V)

R_DS(ON)< 13.5mΩ (V_GS= 4.5V)

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

±12

V_GS

T_C=25°C

Continuous Drain

Current

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

I_DM

I_AR

E_AR

120

135

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

2.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A,D

Maximum Junction-to-Case ^B

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

2.4

R_θJC

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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