Datasheet > AOD492

AOD492

更新时间： 2024-09-13 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	161K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOD492 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.8
Base Number Matches：	1

AOD492 数据手册

AOD492

N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

SRFET ^TMAOD492 uses advanced trench technology

with a monolithically integrated Schottky diode to

provide excellent R_DS(ON),and low gate charge. This

device is suitable for use as a low side FET in SMPS,

load switching and general purpose applications.

V_DS(V) = 30V

I_D=85A (V_GS= 10V)

R_DS(ON)< 4.4mΩ (V_GS= 10V)

_DS(ON)< 6.2mΩ (V_GS= 4.5V)

-RoHS Compliant

-Halogen Free*

100% UIS Tested!

100% Rg Tested!

TO-252

D-PAK

Bottom View

Top View

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current ^B

Pulsed Drain Current^C

Avalanche Current ^C

T_C=100°C

I_D

200

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.3mH ^C

135

T_C=25°C

Power Dissipation ^B

T_C=100°C

100

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Case ^D

R_θJC

0.8

1.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7

中文翻译

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