Datasheet > AOD490

AOD490

更新时间： 2024-01-18 14:30:15

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	160K
描述
Transistor

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技术参数
数据手册

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AOD490 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.81
Base Number Matches：	1

AOD490 数据手册

AOD490

N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

The AOD490 uses advanced trench technology with a

monolithically integrated Schottky diode to provide

excellent R_DS(ON),and low gate charge. This device is

suitable for use as a low side FET in SMPS, load

switching and general purpose applications.

V_DS(V) = 30V

I_D=40A (V_GS= 10V)

R_DS(ON)< 6.8mΩ (V_GS= 10V)

R_DS(ON)< 8.3mΩ (V_GS= 4.5V)

-RoHS Compliant

-Halogen Free*

100% UIS Tested!

100% Rg Tested!

TO-252

D-PAK

Bottom View

Top View

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

T_C=25°C

Continuous Drain

Current ^B

Pulsed Drain Current ^C

T_C=100°C

I_D

100

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current^A

Avalanche Current ^C

I_DSM

I_AR

Repetitive avalanche energy L=0.3mH ^C

E_AR

135

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^D

Steady-State

R_θJC

2.4

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

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