Datasheet > AOD488

AOD488

更新时间： 2024-02-03 12:46:20

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	123K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD488 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.82
Base Number Matches：	1

AOD488 数据手册

AOD488

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD488 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications.

Standard Product AOD488 is Pb-free (meets ROHS

& Sony 259 specifications). AOD488L is a Green

Product ordering option. AOD488 and AOD488L are

electrically identical.

V_DS(V) = 40V

I_D= 20 A

(V_GS= 10V)

R_DS(ON)< 26 mΩ (V_GS= 10V)

R_DS(ON)< 39 mΩ (V_GS= 4.5V)

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

±20

T_C=25°C

Continuous Drain

Current

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

I_DM

I_AR

E_AR

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

17.4

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

7.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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