AOD486A

更新时间： 2024-01-18 03:32:12

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	118K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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技术参数
数据手册
替代型号

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AOD486A 技术参数

生命周期：	Not Recommended	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.56
Base Number Matches：	1

AOD486A 数据手册

AOD486A

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD486A uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. It is ESD protected. This device is suitable for

use in PWM, load switching and general purpose

applications. Standard Product AOD486A is Pb-free

(meets ROHS & Sony 259 specifications).

V_DS(V) = 40V

I_D= 50 A (V_GS= 10V)

_DS(ON)< 9.8 mΩ (V_GS= 10V)

R_DS(ON)< 13 mΩ (V_GS= 4.5V)

ESD PROTECTED

UIS Tested

Rg,Ciss,Coss,Crss Tested

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

Pulsed Drain Current ^C

Avalanche Current ^C

±20

T_C=25°C

T_C=100°C

I_D

I_DM

I_AR

E_AR

100

Repetitive avalanche energy L=0.3mH ^C

135

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

4.1

P_DSM

Power Dissipation ^A

T_A=70°C

2.7

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

17.4

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

1.2

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

中文翻译

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AOD486A 替代型号

型号	品牌	替代类型	描述	数据表
AOD4184A	AOS	类似代替	40V N-Channel MOSFET

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