Datasheet > AOD484_09

AOD484_09

更新时间： 2024-02-16 16:44:59

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	199K
描述
30V N-Channel MOSFET

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AOD484_09 数据手册

AOD484

30V N-Channel MOSFET

General Description

Features

The AOD484 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications.

V_DS(V) = 30V

I_D= 25 A (V_GS= 10V)

R_DS(ON)< 15 mΩ (V_GS= 10V)

_DS(ON)< 23 mΩ (V_GS= 4.5V)

100% UIS Tested

100% Rg Tested

TO252

DPAK

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current ^G

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

I_DM

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.1

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Case ^B

R_θJC

2.3

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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