Datasheet > AOD484

AOD484

更新时间： 2024-06-04 19:38:29

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	475K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:50A;Vgs(th)(V):±20;漏源导通电阻:mΩ@10V;漏源导通电阻:mΩ@4.5V

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AOD484 数据手册

UMW

AOD484

N-Channel 30 V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(m)

Q_g(Typ)

_D(A)^{a, e}

7 at V_GS= 10 V

25 nC

9 at V_GS= 4.5 V

N-Channel MOSFET

APPLICATIONS

•

OR-ing

Server

DC/DC

ABSOLUTE MAXIMUM RATINGS

Parameter

(T = 25 °C, unless otherwise noted)

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

± 20

T_C= 25 °C

T_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 175 °C)

I_D

21.8^{b, c}

8^{b, c}

T_A= 70 °C

I_DM

I_AS

Pulsed Drain Current

200

Avalanche Current Pulse

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

94.8

50^{a, e}

_C= 25 °C

_A= 25 °C

_C= 25 °C

I_S

Continuous Source-Drain Diode Current

3.13^{b, c}

100^a

T_C= 70 °C

_A= 25 °C

P_D

Maximum Power Dissipation

3.25^{b, c}

2.33^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Case

R_thJA

t  10 sec

°C/W

R_thJC

Steady State

0.5

0.6

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 sec.

d. Maximum under steady state conditions is 90 °C/W.

e. Calculated based on maximum junction temperature. Package limitation current is 90 A.

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UTD Semiconductor Co.,Limited

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