Datasheet > AOD484

AOD484

更新时间： 2024-02-04 18:47:40

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	145K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOD484 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	7.99	Base Number Matches：	1

AOD484 数据手册

AOD484

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD484 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications.

Standard Product AOD484 is Pb-free (meets ROHS

& Sony 259 specifications). AOD484L is a Green

Product ordering option. AOD484 and AOD484L

are electrically identical.

V_DS(V) = 30V

I_D= 25 A (V_GS= 10V)

R_DS(ON)< 15 mΩ (V_GS= 10V)

R_DS(ON)< 23 mΩ (V_GS= 4.5V)

UIS Tested!

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^G

±20

V_GS

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

I_DM

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.1

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

2.3

R_θJC

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

中文翻译

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