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AOD476_08 PDF预览

AOD476_08

更新时间: 2024-11-25 12:24:51
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
6页 213K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOD476_08 数据手册

 浏览型号AOD476_08的Datasheet PDF文件第2页浏览型号AOD476_08的Datasheet PDF文件第3页浏览型号AOD476_08的Datasheet PDF文件第4页浏览型号AOD476_08的Datasheet PDF文件第5页浏览型号AOD476_08的Datasheet PDF文件第6页 
AOD476  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
TheꢀAOD476ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀand  
designꢀtoꢀprovideꢀexcellentꢀRDS(ON)ꢀwithꢀlowꢀgate  
charge.ꢀThisꢀdeviceꢀisꢀsuitableꢀforꢀuseꢀinꢀPWM,ꢀload  
switchingꢀandꢀgeneralꢀpurposeꢀapplications.  
VDSꢀ(V)ꢀ=ꢀ20V  
IDꢀ=ꢀ25Aꢀ(VGSꢀ=ꢀ10V)  
RDS(ON)ꢀ<21ꢀmꢀ(VGSꢀ=ꢀ10V)  
DS(ON)ꢀ<28ꢀmꢀ(VGSꢀ=ꢀ4.5V)  
RDS(ON)ꢀ<79ꢀmꢀ(VGSꢀ=ꢀ2.5V)  
R
ꢀꢀꢀꢀꢀꢀꢀꢁRoHSꢀCompliant  
ꢀꢀꢀꢀꢀꢀꢀꢁHalogenꢀFree*  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ 100% UIS Tested!  
100% Rg Tested!  
TO-252  
D-PAK  
D
Bottom View  
Top View  
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
DrainꢁSourceꢀVoltage  
VDS  
20  
V
GateꢁSourceꢀVoltage  
VGS  
±16  
25  
V
A
TC=25°CꢀG  
TC=100°C  
ContinuousꢀDrain  
Current  
ID  
20  
PulsedꢀDrainꢀCurrentꢀC  
AvalancheꢀCurrentꢀC  
RepetitiveꢀavalancheꢀenergyꢀL=0.3mHꢀC  
IDM  
IAR  
EAR  
75  
13  
A
25  
mJ  
TC=25°C  
PowerꢀDissipationꢀB  
TC=100°C  
33.3  
16.7  
2.5  
PD  
W
TA=25°C  
PDSM  
W
PowerꢀDissipationꢀA  
1.6  
TA=70°C  
JunctionꢀandꢀStorageꢀTemperatureꢀRange TJ,ꢀTSTG  
ꢁ55ꢀtoꢀ175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
17  
Max  
25  
Units  
°C/W  
°C/W  
°C/W  
MaximumꢀJunctionꢁtoꢁAmbientꢀA  
tꢀꢀ≤ꢀ10s  
RθJA  
MaximumꢀJunctionꢁtoꢁAmbientꢀA  
SteadyꢁState  
MaximumꢀJunctionꢁtoꢁCaseꢀB  
40  
50  
SteadyꢁState  
RθJC  
3.6  
4.5  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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