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AOD472AL

更新时间: 2024-11-25 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
7页 154K
描述
N-Channel SDMOSTM POWER Transistor

AOD472AL 数据手册

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AOD472A  
N-Channel SDMOSTM POWER Transistor  
General Description  
Features  
The AOD472A/L is fabricated with SDMOSTM trench  
technology that combines excellent RDS(ON) with low gate  
charge.The result is outstanding efficiency with controlled  
switching behavior. This universal technology is well suited  
for PWM, load switching and general purpose applications.  
AOD472A and AOD472AL are electrically identical.  
VDS (V) = 25V  
ID = 55A  
(VGS = 10V)  
(VGS = 10V)  
(VGS = 4.5V)  
RDS(ON) < 5.5m  
RDS(ON) < 9.5mΩ  
100% UIS Tested!  
100% Rg Tested!  
-RoHS Compliant  
-AOD472AL is Halogen Free  
TO-252  
D-PAK  
Bottom View  
D
Top View  
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
25  
±20  
55  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
CurrentG  
Pulsed Drain Current C  
Pulsed Forward Diode CurrentC  
Avalanche Current C  
V
TC=25°C  
TC=100°C  
ID  
43  
IDM  
ISM  
IAR  
EAR  
100  
100  
50  
A
Repetitive avalanche energy L=50uH C  
63  
mJ  
W
TC=25°C  
50  
PD  
Power Dissipation B  
TC=100°C  
25  
TA=25°C  
2.5  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.6  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
15  
Max  
20  
50  
3
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Steady-State  
Steady-State  
41  
Maximum Junction-to-Case B  
Maximum Junction-to-TAB B  
RθJC  
2.1  
RθJC-TAB  
2.4  
3.4  
°C/W  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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