Datasheet > AOD464_10

AOD464_10

更新时间： 2024-11-25 12:24:51

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	152K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD464_10 数据手册

AOD464

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD464 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in high voltage

synchronous rectification , load switching and general

purpose applications.

V_DS(V) = 105V

I_D= 40 A

(V_GS=10V)

R_DS(ON)< 28 mΩ (V_GS=10V) @ 20A

R_DS(ON)< 31 mΩ (V_GS= 6V)

100% UIS Tested!

100% Rg Tested!

-RoHS Compliant

-Halogen Free*

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

105

V_GS

Gate-Source Voltage

±25

T_C=25°C

Continuous Drain

Current

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

100

P_D

T_A=25°C

2.3

P_DSM

Power Dissipation ^A

T_A=70°C

1.5

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

1.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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