AOD454A

更新时间： 2024-11-25 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	215K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD454A 数据手册

AOD454A

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD454A uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. With the excellent thermal resistance of the

DPAK package, this device is well suited for high

current load applications.

V_DS(V) = 40V

I_D= 12A

(V_GS= 10V)

R_DS(ON)< 30mΩ (V_GS= 10V)

_DS(ON)< 40mΩ (V_GS= 4.5V)

100% UIS Tested!

100% Rg Tested!

-RoHS Compliant

-Halogen Free*

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

±20

Gate-Source Voltage

Continuous Drain

Current ^B,H

Pulsed Drain Current^C

Avalanche Current ^C

V_GS

T_C=25°C

T_C=100°C

I_D

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.1mH^C

9.8

°C

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A,G

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A,G

Maximum Junction-to-Case ^F

Steady-State

R_θJC

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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