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AOD4106

更新时间: 2024-11-06 03:18:55
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 138K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOD4106 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.82
Base Number Matches:1

AOD4106 数据手册

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AOD4106  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOD4106 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge.This device is  
suitable for use as a low side switch in SMPS and  
general purpose applications. Standard Product  
AOD4106 is Pb-free (meets ROHS & Sony 259  
specifications). AOD4106L is a Green Product ordering  
option. AOD4106 and AOD4106L are electrically  
identical.  
VDS (V) = 25V  
ID = 50A (VGS = 20V)  
RDS(ON) < 5m(VGS = 20V)  
RDS(ON) < 6.5m(VGS = 12V)  
RDS(ON) < 8.1m(VGS = 10V)  
UIS Tested  
Rg,Ciss,Coss,Crss Tested  
TO-252  
D-PAK  
D
S
Top View  
Drain Connected to  
Tab  
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
25  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current G  
Pulsed Drain Current C  
Avalanche Current C  
±30  
50  
V
A
TC=25°C  
TC=100°C  
ID  
50  
IDM  
IAR  
EAR  
180  
30  
A
Repetitive avalanche energy L=0.3mH C  
135  
75  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
38  
TA=25°C  
6.25  
4
PDSM  
W
Power Dissipation A  
TA=70°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
15  
Max  
20  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,D  
t 10s  
RθJA  
Maximum Junction-to-Ambient A,D  
Maximum Junction-to-Case B  
41  
50  
Steady-State  
Steady-State  
RθJC  
1.5  
2.0  
Alpha & Omega Semiconductor, Ltd.  

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