AOD4106

更新时间： 2024-11-05 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	138K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOD4106 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82
Base Number Matches：	1

AOD4106 数据手册

AOD4106

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD4106 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge.This device is

suitable for use as a low side switch in SMPS and

general purpose applications. Standard Product

AOD4106 is Pb-free (meets ROHS & Sony 259

specifications). AOD4106L is a Green Product ordering

option. AOD4106 and AOD4106L are electrically

identical.

V_DS(V) = 25V

I_D= 50A (V_GS= 20V)

R_DS(ON)< 5mΩ (V_GS= 20V)

R_DS(ON)< 6.5mΩ (V_GS= 12V)

R_DS(ON)< 8.1mΩ (V_GS= 10V)

UIS Tested

Rg,Ciss,Coss,Crss Tested

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

Pulsed Drain Current ^C

Avalanche Current ^C

±30

T_C=25°C

T_C=100°C

I_D

I_DM

I_AR

E_AR

180

Repetitive avalanche energy L=0.3mH ^C

135

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

6.25

P_DSM

Power Dissipation ^A

T_A=70°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A,D

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A,D

Maximum Junction-to-Case ^B

Steady-State

R_θJC

1.5

2.0

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

中文翻译

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