Datasheet > AOD4104

AOD4104

更新时间： 2024-11-05 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	207K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOD4104 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AOD4104 数据手册

AOD4104

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

TheꢀAOD4104ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto

provideꢀexcellentꢀR_DS(ON),ꢀshootꢁthroughꢀimmunity

andꢀbodyꢀdiodeꢀcharacteristics.ꢀThisꢀdeviceꢀisꢀideally

suitedꢀforꢀuseꢀasꢀaꢀlowꢀsideꢀswitchꢀinꢀCPUꢀcore

powerꢀconversion.

V_DSꢀ(V)ꢀ=ꢀ25V

I_Dꢀ=ꢀ75Aꢀ(V_GSꢀ=ꢀ10V)

R_DS(ON)ꢀ<ꢀ3.6mΩꢀ(V_GSꢀ=ꢀ20V)

R_DS(ON)ꢀ<ꢀ4.5mΩꢀ(V_GSꢀ=ꢀ12V)

R_DS(ON)ꢀ<ꢀ5.4mΩ (V_GSꢀ=ꢀ10V)

ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant

ꢀꢀꢀꢀꢀꢁHalogenꢀFree*

100% UIS Tested!

100% Rg Tested!

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

DrainꢁSourceꢀVoltage

V_DS

GateꢁSourceꢀVoltage

V_GS

±30

T_C=25°Cꢀ^G

T_C=100°C

ContinuousꢀDrain

Currentꢀ^B,G,I

I_D

PulsedꢀDrainꢀCurrentꢀ^C

AvalancheꢀCurrentꢀ^C

I_DM

I_AR

E_AR

200

RepetitiveꢀavalancheꢀenergyꢀL=0.3mHꢀ^C

135

100

T_C=25°C

P_D

PowerꢀDissipationꢀ^BT_C=100°C

T_A=25°C

PowerꢀDissipationꢀ^AT_A=70°C

2.5

P_DSM

1.6

JunctionꢀandꢀStorageꢀTemperatureꢀRange

T_J,ꢀT_STG

ꢁ55ꢀtoꢀ175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A

tꢀꢀ≤ꢀ10s

R_θJA

SteadyꢁState

MaximumꢀJunctionꢁtoꢁCaseꢀ^B

R_θJC

1.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

中文翻译

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