Datasheet > AOD4102_10

AOD4102_10

更新时间： 2024-11-05 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	296K
描述
30V N-Channel MOSFET

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AOD4102_10 数据手册

AOD4102/AOI4102

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AOD4102/AOI4102 uses advanced trench

technology and design to provide excellent R_DS(ON)with

low gate charge. This device is suitable for use in PWM,

load switching and general purpose applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

19A

< 37mΩ

< 64mΩ

100% UIS Tested

100% Rg Tested

TO251A

IPAK

TO-252

D-PAK

Bottom View

Top View

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

6.5

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.3mH ^C

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

4.2

P_DSM

°C

Power Dissipation ^A

2.7

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

4.5

Rev 0: January 2010

www.aosmd.com

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