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AOD4100 PDF预览

AOD4100

更新时间: 2024-11-05 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
6页 209K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOD4100 数据手册

 浏览型号AOD4100的Datasheet PDF文件第2页浏览型号AOD4100的Datasheet PDF文件第3页浏览型号AOD4100的Datasheet PDF文件第4页浏览型号AOD4100的Datasheet PDF文件第5页浏览型号AOD4100的Datasheet PDF文件第6页 
AOD4100  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
TheꢀAOD4100ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto  
provideꢀexcellentꢀRDS(ON),ꢀshootꢁthroughꢀimmunity  
andꢀbodyꢀdiodeꢀcharacteristics.ꢀThisꢀdeviceꢀisꢀideally  
suitedꢀforꢀuseꢀasꢀaꢀHighꢀsideꢀswitchꢀinꢀCPUꢀcore  
powerꢀconversion.  
VDSꢀ(V)ꢀ=ꢀ25V  
IDꢀ=ꢀ50Aꢀ(VGSꢀ=ꢀ10V)  
R
DS(ON)ꢀ<ꢀ6.5mꢀ(VGSꢀ=ꢀ20V)  
RDS(ON)ꢀ<ꢀ9mꢀ(VGSꢀ=ꢀ12V)  
DS(ON)ꢀ<ꢀ12mꢀ(VGSꢀ=ꢀ10V)  
R
ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant  
ꢀꢀꢀꢀꢀꢁHalogenꢀFree*  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
100% UIS Tested!  
100% Rg Tested!  
TO-252  
D-PAK  
Bottom View  
Top View  
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
DrainꢁSourceꢀVoltage  
VDS  
25  
±30  
50  
V
GateꢁSourceꢀVoltage  
VGS  
V
A
TC=25°CꢀG  
TC=100°C  
ContinuousꢀDrain  
CurrentꢀB  
ID  
49  
PulsedꢀDrainꢀCurrentꢀC  
AvalancheꢀCurrentꢀC  
IDM  
IAR  
EAR  
120  
28  
A
RepetitiveꢀavalancheꢀenergyꢀL=0.3mHꢀC  
118  
50  
mJ  
TC=25°C  
PD  
W
PowerꢀDissipationꢀB TC=100°C  
TA=25°C  
PowerꢀDissipationꢀA TA=70°C  
25  
6.5  
PDSM  
W
4.2  
JunctionꢀandꢀStorageꢀTemperatureꢀRange  
TJ,ꢀTSTG  
ꢁ55ꢀtoꢀ175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
16  
43  
2
Max  
19  
52  
3
Units  
°C/W  
°C/W  
°C/W  
MaximumꢀJunctionꢁtoꢁAmbientA  
MaximumꢀJunctionꢁtoꢁAmbientA  
tꢀꢀ≤ꢀ10s  
RθJA  
SteadyꢁState  
SteadyꢁState  
MaximumꢀJunctionꢁtoꢁCaseꢀD  
RθJC  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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