Datasheet > AOD410

AOD410

更新时间： 2024-09-15 12:52:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	400K
描述
N-Channel 30-V (D-S) MOSFET High performance trench technology

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AOD410 数据手册

Freescale

AOD410/MCD410

N-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

59 @ V_GS= 10V

88 @ V_GS= 4.5V

I_D(A)

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

DPAK saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Units

Drain-Source Voltage

V_DS

V_GS

I_D

I_DM

I_S

±20

Gate-Source Voltage

Continuous Drain Current^a

Pulsed Drain Current^b

T_C=25 C

Continuous Source Current (Diode Conduction)^a

^oC

P_D

Power Dissipation

T_C=25 C

Operating Junction and Storage Temperature Range

T, T -55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum Units

Maximum Junction-to-Ambient^a

Maximum Junction-to-Case

^oC/W

R_θJA

R_θJC

^oC/W

3.0

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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