Datasheet > AOD409

AOD409

更新时间： 2024-11-06 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	484K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-26A;Vgs(th)(V):±20;漏源导通电阻:48mΩ@-10V

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AOD409 数据手册

AOD409

UMW

P-Channel -60 V (D-S) MOSFET

General Description

The AOD409 uses advanced trench technology to

provide excellent R

, low gate charge and low

DS(ON)

gate resistance. With the excellent thermal resistance

of the TO-252 package, this device is well suited for

high current load applications.

Features

V_DS(V) = -60V

I_D= -26A (V_GS= -10V)

R_DS(ON)< 48mΩ (V_GS= -10V) @ -20A

R_DS(ON)< 55mΩ (V_GS= -4.5V)

=25°C unless otherwise noted

Absolute Maximum Ratings T

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-60

±20

-26

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

T_C=25°C

T_C=100°C

I_D

-18

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

-60

-26

33.8

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Steady-State

R_θJC

1.9

2.5

www.umw-ic.com

UTD Semiconductor Co.,Limited

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