Datasheet > AOD403_11

AOD403_11

更新时间： 2024-11-18 12:24:51

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	414K
描述
30V P-Channel MOSFET

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AOD403_11 数据手册

AOD403/AOI403

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AOD403/AOI403 uses advanced trench technology

to provide excellent R_DS(ON), low gate charge and low gate

resistance. With the excellent thermal resistance of the

DPAK/IPAK package, this device is well suited for high

current load applications.

I_D(at V_GS= -20V)

R_DS(ON)(at V_GS= -20V)

R_DS(ON)(at V_GS= -10V)

-70A

< 6.2mΩ

< 8mΩ

100% UIS Tested

100% R_gTested

TO252

DPAK

TO251A

IPAK

Top View

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±25

-70

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

-55

Pulsed Drain Current ^C

I_DM

-200

-15

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

-12

I_AS, I_AR

-50

E_AS, E_AR

125

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.9

1.6

Rev 8: May 2011

www.aosmd.com

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