Datasheet > AOD403

AOD403

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	512K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-20A;Vgs(th)(V):±25;漏源导通电阻:8mΩ@-10V

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AOD403 数据手册

AOD403

UMW

-30V P-Channel MOSFET

General Description

The AOD403 uses advanced trench technology to provide excellent

R_DS(ON), low gate charge and low gate resistance. With the excellent

thermal resistance of the TO-252 package, this device is well suited

for high current load applications.

TO-252

Features

V_DS(V) = -30V

R_DS(ON)< 8mΩ (V_GS= -10V)

R_DS(ON)< 6.2mΩ (V_GS= -20V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±25

T_C=25°C

-70

Continuous Drain

Current ^G

I_D

T_C=100°C

-55

Pulsed Drain Current ^C

I_DM

-200

-15

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

-12

Avalanche Current ^C

I_AS, I_AR

-50

Avalanche energy L=0.1mH ^C

E_AS, E_AR

125

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

t ≤ 10s

R_θJA

Steady-State

R_θJC

0.9

1.6

www.umw-ic.com

UTD Semiconductor Co.,Limited

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