Datasheet > AOD400_08

AOD400_08

更新时间： 2024-11-04 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	215K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD400_08 数据手册

AOD400

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD400 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications.

V_DS(V) = 30V

I_D= 10 A (V_GS= 10V)

_DS(ON)< 30 mΩ (V_GS= 10V)

_DS(ON)< 36 mΩ (V_GS= 4.5V)

R_DS(ON)< 52 mΩ (V_GS= 2.5V)

-RoHS Compliant

-Halogen Free*

100% Rg Tested!

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

T_C=25°C

Continuous Drain

Current ^G

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.1mH

T_C=25°C

Power Dissipation ^B

P_D

T_C=100°C

T_A=25°C

2.1

P_DSM

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

17.4

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

7.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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