Datasheet > AOD3N50_11

AOD3N50_11

更新时间： 2024-11-21 12:24:51

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	331K
描述
500V, 3A N-Channel MOSFET

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AOD3N50_11 数据手册

AOD3N50/AOU3N50

500V, 3A N-Channel MOSFET

General Description

Product Summary

TheꢀAOD3N50ꢀ&ꢀAOU3N50ꢀhaveꢀbeenꢀfabricatedꢀusing

anꢀadvancedꢀhighꢀvoltageꢀMOSFETꢀprocessꢀthatꢀis

designedꢀtoꢀdeliverꢀhighꢀlevelsꢀofꢀperformanceꢀand

robustnessꢀinꢀpopularꢀACꢁDCꢀapplications.

ByꢀprovidingꢀlowꢀR_DS(on),ꢀC_issꢀandꢀC_rssꢀalongꢀwith

guaranteedꢀavalancheꢀcapabilityꢀtheseꢀpartsꢀcanꢀbe

adoptedꢀquicklyꢀintoꢀnewꢀandꢀexistingꢀofflineꢀpowerꢀsupply

designs.

V_DS

600V@150℃

2.8A

ꢀꢀꢀI_Dꢀꢀ(atꢀV_GS=10V)

ꢀꢀꢀR_DS(ON)ꢀ(atꢀV_GS=10V)

<ꢀ3Ω

100%ꢀUISꢀTested!

100%ꢀꢀR_gꢀTested!

TO252

DPAK

TO251

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

DrainꢁSourceꢀVoltage

V_DS

500

GateꢁSourceꢀVoltage

V_GS

±30

2.8

1.8

T_C=25°C

ContinuousꢀDrain

Current^B

I_D

T_C=100°C

PulsedꢀDrainꢀCurrentꢀ^C

I_DM

AvalancheꢀCurrentꢀ^C

I_AR

Repetitiveꢀavalancheꢀenergyꢀ^C

E_AR

E_AS

dv/dt

Singleꢀpulsedꢀavalancheꢀenergy^ꢀH

Peakꢀdiodeꢀrecoveryꢀdv/dt

T_C=25°C

120

V/ns

W/ꢀ^oC

P_D

PowerꢀDissipationꢀ^B

Derateꢀaboveꢀ25^oC

0.45

ꢁ50ꢀtoꢀ150

JunctionꢀandꢀStorageꢀTemperatureꢀRange

T_J,ꢀT_STG

°C

Maximumꢀleadꢀtemperatureꢀforꢀsoldering

purpose,ꢀ1/8"ꢀfromꢀcaseꢀforꢀ5ꢀseconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A,G

ꢁ

0.5

2.2

MaximumꢀCaseꢁtoꢁsinkꢀ^A

MaximumꢀJunctionꢁtoꢁCase^D,F

R_θCS

R_θJC

1.8

Revꢀ6:ꢀAugꢀ2011ꢀ

www.aosmd.com

Pageꢀ1ꢀofꢀ6ꢀꢀꢀꢀꢀꢀꢀ

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中文翻译

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