Datasheet > AOD3N40

AOD3N40

更新时间： 2024-11-18 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	395K
描述
400V,2.6A N-Channel MOSFET

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AOD3N40 数据手册

AOD3N40

400V,2.6A N-Channel MOSFET

General Description

Product Summary

The AOD3N40 has been fabricated using an advanced

high voltage MOSFET process that is designed to deliver

high levels of performance and robustness in popular AC-

DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability this device can be

adopted quickly into new and existing offline power supply

designs.

V_DS

500V@150℃

2.6A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 3.1Ω

100% UIS Tested!

100% R_gTested!

TO252

DPAK

Top View

Bottom View

AOD3N40

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

400

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±30

T_C=25°C

2.6

Continuous Drain

Current^B

I_D

T_C=100°C

1.6

Pulsed Drain Current ^C

I_DM

5.6

1.5

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single pulsed avalanche energy^H

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

Junction and Storage Temperature Range

T_J, T_STG

-50 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

Maximum Junction-to-Ambient ^A,G

°C/W

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

0.5

2.5

°C/W

R_θJC

2.1

Rev0: Oct 2011

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