Datasheet > AOD3N40

AOD3N40

更新时间： 2024-11-18 12:51:27

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飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	511K
描述
400V,2.6A N-Channel MOSFET

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AOD3N40 数据手册

AOD3N40

400V,2.6A N-Channel MOSFET

General Description

The AOD3N40 has been fabricated using an advanced

high voltage MOSFET process that is designed to deliver

high levels of performance and robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with guaranteed avalanche capability this device can be

adopted quickly into new and existing offline power supply

designs.

Features

V_DS

500V@150℃

2.6A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 3.1Ω

TO252

DPAK

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

400

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±30

T_C=25°C

2.6

Continuous Drain

Current^B

I_D

T_C=100°C

1.6

Pulsed Drain Current ^C

I_DM

5.6

1.5

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single pulsed avalanche energy^H

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

Junction and Storage Temperature Range

T_J, T_STG

-50 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

Maximum Junction-to-Ambient ^A,G

°C/W

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

0.5

2.5

°C/W

R_θJC

2.1

1/6

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