Datasheet > AOD3422

AOD3422

更新时间： 2024-09-15 12:56:43

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	133K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD3422 数据手册

AO3422

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO3422 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. It

offers operation over a wide gate drive range from

2.5V to 12V. This device is suitable for use as a load

switch. Standard product AO3422 is Pb-free (meets

ROHS & Sony 259 specifications). AO3422L is a

Green Product ordering option. AO3422 and

AO3422L are electrically identical.

V_DS(V) = 55V

I_D= 2.1A (V_GS= 4.5V)

_DS(ON)< 160mΩ (V_GS= 4.5V)

_DS(ON)< 200mΩ (V_GS= 2.5V)

TO-236

(SOT-23)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

V_GS

±12

T_A=25°C

T_A=70°C

2.1

1.7

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.25

P_D

Power Dissipation

0.8

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

100

150

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

115

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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