Datasheet > AOD2N60A

AOD2N60A

更新时间： 2024-11-18 12:54:07

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	2640K
描述
600V,2A N-Channel MOSFET

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AOD2N60A 数据手册

万和兴电子有限公司 www.whxpcb.com

AOD2N60A/AOI2N60A

600V,2A N-Channel MOSFET

General Description

Product Summary

The AOD2N60A & AOI2N60A have been fabricated using

an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

V_DS@ Tj,max

700V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 4.7Ω

100% UIS Tested!

100% R_gTested!

TO252

DPAK

TO251A

IPAK

Top View

Bottom View

Top View

Bottom View

AOI2N60A

AOD2N60A

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

600

Gate-Source Voltage

V_GS

±30

T_C=25°C

Continuous Drain

Current^B

I_D

T_C=100°C

1.4

Pulsed Drain Current ^C

I_DM

4.6

Avalanche Current ^C,I

I_AR

Repetitive avalanche energy ^C,I

E_AR

E_AS

dv/dt

10.6

Single pulsed avalanche energy ^H

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

0.45

-50 to 150

Junction and Storage Temperature Range

T_J, T_STG

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

Maximum Junction-to-Ambient ^A,G

0.5

2.2

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

R_θJC

1.8

Rev.1.0 September 2013

www.aosmd.com

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