AOD1N60 / AOU1N60
1.3A, 600V N-Channel MOSFET
formerly engineering part number AOD9600
General Description
Features
The AOD1N60 has been fabricated using an
advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
VDS (V) = 600V
ID = 1.3A
RDS(ON) < 9Ω (VGS = 10V)
100% UIS Tested!
100% R g Tested!
C iss , C oss , C rss Tested!
TO-252
D-PAK
TO-251
Top View Bottom View
D
Top View
Bottom View
D
D
G
G
D
S
G
S
S
D
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximium
600
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current B
Pulsed Drain Current C
Avalanche Current C
VGS
±30
TC=25°C
1.3
TC=100°C
ID
0.8
A
IDM
IAR
4.0
1.0
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
15
mJ
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
30
5
45
mJ
V/ns
W
PD
Power Dissipation B
Derate above 25oC
0.36
W/ C
o
TJ, TSTG
Junction and Storage Temperature Range
-50 to 150
°C
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
Parameter
Symbol
RθJA
Typical
Maximum
Units
Maximum Junction-to-Ambient A,G
Maximum Case-to-Sink A
°C/W
45
-
55
0.5
2.8
RθCS
°C/W
°C/W
Maximum Junction-to-Case D,F
RθJC
2.3
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com