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AOD1N60 PDF预览

AOD1N60

更新时间: 2024-09-15 06:37:15
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 152K
描述
1.3A, 600V N-Channel MOSFET

AOD1N60 数据手册

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AOD1N60 / AOU1N60  
1.3A, 600V N-Channel MOSFET  
formerly engineering part number AOD9600  
General Description  
Features  
The AOD1N60 has been fabricated using an  
advanced high voltage MOSFET process that is  
designed to deliver high levels of performance and  
robustness in popular AC-DC applications.  
By providing low RDS(on), Ciss and Crss along with  
guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power  
supply designs.  
VDS (V) = 600V  
ID = 1.3A  
RDS(ON) < 9(VGS = 10V)  
100% UIS Tested!  
100% R g Tested!  
C iss , C oss , C rss Tested!  
TO-252  
D-PAK  
TO-251  
Top View Bottom View  
D
Top View  
Bottom View  
D
D
G
G
D
S
G
S
S
D
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximium  
600  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current B  
Pulsed Drain Current C  
Avalanche Current C  
VGS  
±30  
TC=25°C  
1.3  
TC=100°C  
ID  
0.8  
A
IDM  
IAR  
4.0  
1.0  
A
Repetitive avalanche energy C  
EAR  
EAS  
dv/dt  
15  
mJ  
Single pulsed avalanche energy H  
Peak diode recovery dv/dt  
TC=25°C  
30  
5
45  
mJ  
V/ns  
W
PD  
Power Dissipation B  
Derate above 25oC  
0.36  
W/ C  
o
TJ, TSTG  
Junction and Storage Temperature Range  
-50 to 150  
°C  
°C  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
Thermal Characteristics  
TL  
300  
Parameter  
Symbol  
RθJA  
Typical  
Maximum  
Units  
Maximum Junction-to-Ambient A,G  
Maximum Case-to-Sink A  
°C/W  
45  
-
55  
0.5  
2.8  
RθCS  
°C/W  
°C/W  
Maximum Junction-to-Case D,F  
RθJC  
2.3  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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