Datasheet > AOD11S60

AOD11S60

更新时间： 2024-09-15 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	400K
描述
600V 11A a MOS Power Transistor

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数据手册
替代型号

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AOD11S60 数据手册

AOD11S60/AOI11S60

600V 11A

MOS ^TMPower Transistor

General Description

Product Summary

V_DS@ T_j,max

I_DM

700V

45A

The AOD11S60 & AOI11S60 have been fabricated using

the advanced αMOS^TMhigh voltage process that is

designed to deliver high levels of performance and

robustness in switching applications.

R_DS(ON),max

Q_g,typ

0.399Ω

11nC

2.7µJ

By providing low R_DS(on), Q_gand E_OSSalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

E_oss@ 400V

100% UIS Tested

100% R_gTested

TO252

DPAK

TO251A

IPAK

Top View

Bottom View

Top View

Bottom View

AOI11S60

AOD11S60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

600

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±30

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

8.5

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^H

T_C=25°C

E_AR

E_AS

120

208

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

1.67

100

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt

dv/dt

V/ns

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds ^K

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

Typical

Maximum

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

R_θJC

0.5

0.6

°C/W

0.45

Rev3: Jan 2012

www.aosmd.com

Page 1 of 7

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AOD11S60 替代型号

型号	品牌	替代类型	描述	数据表
NDD60N360U1-35G	ONSEMI	功能相似	N-Channel Power MOSFET
AOB11S60L	AOS	功能相似	Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Me
IPB65R380C6	INFINEON	功能相似	650V CoolMOS C6 Power Transistor

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