Datasheet > AOC2800

AOC2800

更新时间： 2024-11-24 12:51:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	306K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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AOC2800 数据手册

AOC2800

Common-Drain Dual N-Channel Enhancement

Mode Field Effect Transistor

General Description

_SS(ON), low gate charge and operation with gate

excellent R

The AOC2800 uses advanced trench technology to provide

voltages as low as 2.5V while retaining a 12V V^GS(MAX)

rating.

It is ESD protected. This device is suitable for use as a uni-

ted by itscommon-drain configuration.

directional or bi-directional load switch, facilita

Features

Vss

30V

I_D(at V_GS=4.5V)

R_SS(ON)(at V_GS=4.5V)

R_SS(ON)(at V_GS=4.0V)

R_SS(ON)(at V_GS=3.1V)

< 42mΩ

< 44mΩ

< 49mΩ

< 61mΩ

_SS(ON)(at V_GS=2.5V)

WLCSP 1.57x1.57_4

Equivalent Circuit

Bottom View

Top View

Pin1(S1)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Source-Source Voltage

Gate-Source Voltage

Source Current (DC) ^Note1

Source Current (Pulse) ^Note2

V_SS

±12

V_GS

T_A=25°C I _S

I_SM

Power Dissipation ^Note1

P_D

°C

T_A=25°C

1.3

Junction and Storage Temperature Range

Note 1. Mounted on minimum pad PCB

T_J, T_STG

-55 to 150

Note 2. PW <300 µs pulses, duty cycle 0.5% max

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