AOC2800

更新时间： 2024-11-24 12:24:51

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	250K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AOC2800 数据手册

AOC2800

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Product Summary

Vss

30V

The AOC2800 uses advanced trench technology to provide

excellent R_SS(ON), low gate charge and operation with gate

voltages as low as 2.5V while retaining a 12V V_GS(MAX)rating.

It is ESD protected. This device is suitable for use as a uni-

directional or bi-directional load switch, facilitated by its

common-drain configuration.

I_D(at V_GS=4.5V)

R_SS(ON)(at V_GS=4.5V)

R_SS(ON)(at V_GS=4.0V)

< 42mΩ

< 44mΩ

< 49mΩ

< 61mΩ

_SS(ON)(at V_GS=3.1V)

R_SS(ON)(at V_GS=2.5V)

WLCSP 1.57x1.57_4

Bottom View

Top View

Equivalent Circuit

Pin1(S1)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Source-Source Voltage

Gate-Source Voltage

Source Current (DC) ^Note1

Source Current (Pulse) ^Note2

V_SS

±12

V_GS

T_A=25°C I _S

I_SM

Power Dissipation ^Note1

P_D

°C

T_A=25°C

1.3

Junction and Storage Temperature Range

Note 1. Mounted on minimum pad PCB

T_J, T_STG

-55 to 150

Note 2. PW <300 µs pulses, duty cycle 0.5% max

Rev 4: Nov. 2012

www.aosmd.com

Page 1 of 5

12 3 4 5

中文翻译

下载PDF

与AOC2800相关器件

型号	品牌	获取价格	描述	数据表
AOC2802	FREESCALE	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AOC2802	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AOC-3.3S	ARCH	获取价格	AC-DC Power Module
AOC4810	AOS	获取价格	Plastic Encapsulated Device
AOC-5S	ARCH	获取价格	AC-DC Power Module
AOC-5S3.3S	ARCH	获取价格	AC-DC Power Module
AOC-8S	ARCH	获取价格	AC-DC Power Module
AOC-8S5S	ARCH	获取价格	AC-DC Power Module
AOC-9S	ARCH	获取价格	AC-DC Power Module
AOCH	ARCH	获取价格	AC-DC Power Module