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AOC2422 PDF预览

AOC2422

更新时间: 2024-11-20 12:24:51
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 244K
描述
8V N-Channel MOSFET

AOC2422 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.77
Base Number Matches:1

AOC2422 数据手册

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AOC2422  
8V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
8V  
The AOC2422 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and operation  
with gate voltages as low as 1.2V while retaining a 5V  
VGS(MAX) rating.  
ID (at VGS=2.5V)  
RDS(ON) (at VGS=2.5V)  
RDS(ON) (at VGS=1.8V)  
RDS(ON) (at VGS=1.5V)  
RDS(ON) (at VGS=1.2V)  
3.5A  
< 33m  
< 38mΩ  
< 43mΩ  
< 58mΩ  
Typical ESD protection  
HBM Class 2  
D
MCSP 0.97x0.97A_4  
Top View  
Bottom View  
Top View  
Bottom View  
3
4
2
1
S
S
G
Pin1(G)  
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Source Current (DC) Note1  
Source Current (Pulse) Note2  
Power Dissipation Note1  
8
V
V
VGS  
±5  
3.5  
ID  
TA=25°C  
TA=25°C  
A
IDM  
35  
0.6  
PD  
W
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
110  
160  
Max  
140  
200  
Units  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
t
10s  
RθJA  
Steady-State  
Note 1. Mounted on minimum pad PCB  
Note 2. PW <300 s pulses, duty cycle 0.5% max  
Rev 0 : Nov. 2012  
www.aosmd.com  
Page 1 of 5  

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