Datasheet > AOC2421

AOC2421

更新时间： 2024-11-20 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	257K
描述
8V P-Channel MOSFET

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中文翻译

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技术参数
数据手册

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AOC2421 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.56
Base Number Matches：	1

AOC2421 数据手册

AOC2421

8V P-Channel MOSFET

General Description

Product Summary

V_DS

-8V

The AOC2421 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 1.2V while retaining a 5V

V_GS(MAX)rating.

I_D(at V_GS=-2.5V)

R_DS(ON)(at V_GS=-2.5V)

R_DS(ON)(at V_GS=-1.8V)

R_DS(ON)(at V_GS=-1.5V)

R_DS(ON)(at V_GS=-1.2V)

-2.5A

< 60mΩ

< 72mΩ

< 85mΩ

< 115mΩ

Typical ESD protection

HBM Class 2

MCSP 0.97x0.97A_4

Top View

Bottom View

Top View

Bottom View

Pin1(G)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

Source Current (DC) ^Note1

Source Current (Pulse) ^Note2

Power Dissipation ^Note1

-8

±5

V_GS

I_D

T_A=25°C

-2.5

I_DM

-25

0.6

P_D

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

110

160

Max

140

200

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

≤ 10s

R_θJA

Steady-State

Note 1. Mounted on minimum pad PCB

Note 2. PW <300 ꢀs pulses, duty cycle 0.5% max

Rev 0 : Nov. 2012

www.aosmd.com

Page 1 of 5

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中文翻译

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