Datasheet > AOC2414

AOC2414

更新时间： 2024-11-20 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	256K
描述
8V N-Channel MOSFET

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中文翻译

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AOC2414 数据手册

AOC2414

8V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOC2414 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 1.2V while retaining a 5V

V_GS(MAX)rating.

I_D(at V_GS=2.5V)

R_DS(ON)(at V_GS=2.5V)

R_DS(ON)(at V_GS=1.8V)

R_DS(ON)(at V_GS=1.5V)

R_DS(ON)(at V_GS=1.2V)

4.5A

< 19mΩ

< 21mΩ

< 24mΩ

< 29mΩ

Typical ESD protection

HBM Class 2

MCSP 1.57x1.57_4

Top View

Bottom View

Top View

Bottom View

Pin1(G)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

Source Current (DC) ^Note1

Source Current (Pulse) ^Note2

Power Dissipation ^Note1

V_GS

±5

4.5

I_D

T_A=25°C

I_DM

0.55

P_D

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

140

190

Max

170

230

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

≤ 10s

R_θJA

Steady-State

Note 1. Mounted on minimum pad PCB

Note 2. PW <300 ꢀs pulses, duty cycle 0.5% max

Rev 0 : Nov. 2012

www.aosmd.com

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