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AOC2412 PDF预览

AOC2412

更新时间: 2024-11-24 12:51:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 227K
描述
20V N-Channel MOSFET

AOC2412 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.81
Base Number Matches:1

AOC2412 数据手册

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AOC2412  
20V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
20V  
The AOC2412 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and operation  
with gate voltages as low as 1.8V while retaining a 8V  
VGS(MAX) rating.  
ID (at VGS=4.5V)  
RDS(ON) (at VGS=4.5V)  
RDS(ON) (at VGS=2.5V)  
RDS(ON) (at VGS=1.8V)  
4.5A  
< 23m  
< 26mΩ  
< 30mΩ  
Typical ESD protection  
HBM Class 3A  
D
MCSP 1.57x1.57_4  
Top View  
Bottom View  
Top View  
Bottom View  
3
4
2
1
D
D
G
Pin1(G)  
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Source Current (DC) Note1  
Source Current (Pulse) Note2  
Power Dissipation Note1  
20  
±8  
V
V
VGS  
ID  
TA=25°C  
TA=25°C  
4.5  
A
IDM  
65  
0.55  
PD  
W
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
140  
190  
Max  
170  
230  
Units  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
t
10s  
RθJA  
Steady-State  
Note 1. Mounted on minimum pad PCB  
Note 2. PW <300 s pulses, duty cycle 0.5% max  
Rev 0 : Nov. 2012  
www.aosmd.com  
Page 1 of 5  

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