Datasheet > AOC2411

AOC2411

更新时间： 2024-09-16 12:51:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
4页	234K
描述
30V P-Channel MOSFET

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AOC2411 数据手册

AOC2411

30V P-Channel MOSFET

General Description

The AOC2411 uses advanced trench technology to provide

, low gate charge and operation with gate

excellent R_DS(ON)

rating.

voltages as low as 2.5V while retaining a 12V V_GS(MAX)

Features

Vds

-30V

I_D(at V_GS=-4.5V)

-3.4A

R_DS(ON)(at V_GS=-4.5V) < 45mΩ

R_DS(ON)(at V_GS=-2.5V) < 60mΩ

Equivalent Circuit

Bottom View

Top View

Pin1(G)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

I _D

±12

-3.4

-52

Source Current (DC) ^Note1

Source Current (Pulse) ^Note2

T_A=25°C

I_SM

Power Dissipation ^Note1

P_D

°C

T_A=25°C

0.8

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Typ

Max

Units

Maximum Junction-to-Ambient ^Note1

Maximum Junction-to-Foot(Drain)

t ≤ 5s

°C/W

Steady-State

130

155

°C/W

R_θJF

Note 1. Mounted on minimum pad PCB

Note 2. PW <300 µs pulses, duty cycle 0.5% max

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