Datasheet > AOB462L

AOB462L

更新时间： 2024-11-09 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	445K
描述
60V N-Channel MOSFET

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AOB462L 数据手册

AOT462L/AOB462L

60V N-Channel MOSFET

General Description

Product Summary

V_DS

60V

The AOT462L/AOB462L combines advanced trench

MOSFET technology with a low resistance package to

provide extremely low R_DS(ON).This device is ideal for

boost converters and synchronous rectifiers for

consumer, telecom, industrial power supplies and LED

backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

35A

< 18mΩ

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

120

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.3mH ^C

I_DSM

I_AS, I_AR

E_AS, E_AR

101

100

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.1

P_DSM

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

1.25

1.5

Rev 0: Aug 2010

www.aosmd.com

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