Datasheet > AOB440

AOB440

更新时间： 2024-11-20 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	87K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOB440 数据手册

AOB440

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOB440 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in UPS, high

current switching applications. Standard Product

AOB440 is Pb-free (meets ROHS & Sony 259

specifications).

V_DS(V) = 60V

I_D= 75 A

(V_GS= 10V)

R_DS(ON)< 7.5mΩ (V_GS= 10V)

TO-263

D2-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current^G

±20

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

150

320

T_C=25°C

Power Dissipation ^B

T_C=100°C

150

P_D

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

°C/W

t≤10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

°C/W

Steady-State

R_θJA

R_θJC

0.7

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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