Datasheet > AOB434

AOB434

更新时间： 2024-11-20 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	146K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOB434 数据手册

AOB434

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOB434 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications.

Standard product AOB434 is Pb-free (meets ROHS &

Sony 259 specifications). AOB434L is a Green

Product ordering option. AOB434 and AOB434L are

electrically identical.

V_DS(V) =25V

I_D= 55 A (VGS = 10V)

R_DS(ON)< 9.5 mΩ (V_GS= 10V)

R_DS(ON)< 15 mΩ (V_GS= 4.5V)

TO-263

D2-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

100

135

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

2.1

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

2.4

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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