AOB430YL

更新时间： 2024-11-20 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	130K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AOB430YL 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

AOB430YL 数据手册

AOB430Y

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOB430Y uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in high voltage

synchronous rectification , load switching and general

purpose applications. Standard product AOB430Y is

Pb free, inside and out. It uses Pb-free dia attach

and plating material(meets ROHS & Sony 259

specifications). AOB430YL is a Green Product

ordering option. AOB430Y and AOB430YL are

electrically identical.

V_DS(V) = 60V

I_D= 12A (Vgs=10V)

_DS(ON)< 63 mΩ (V_GS=10V)

_DS(ON)< 85 mΩ (V_GS= 6V)

TO-263

D2-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^G

Pulsed Drain Current ^C

Avalanche Current ^C

V_GS

±20

T_C=25°C

T_C=100°C

I_D

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.1mH ^C

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Symbol

Typ

11.2

Max

13.5

Units

°C/W

t ≤ 10s

Steady-State

R_θJA

R_θJC

2.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

中文翻译

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