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AOB430Y

更新时间: 2024-11-20 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 130K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOB430Y 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

AOB430Y 数据手册

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AOB430Y  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOB430Y uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate  
charge. This device is suitable for use in high voltage  
synchronous rectification , load switching and general  
purpose applications. Standard product AOB430Y is  
Pb free, inside and out. It uses Pb-free dia attach  
and plating material(meets ROHS & Sony 259  
specifications). AOB430YL is a Green Product  
ordering option. AOB430Y and AOB430YL are  
electrically identical.  
VDS (V) = 60V  
ID = 12A (Vgs=10V)  
R
DS(ON) < 63 m(VGS =10V)  
DS(ON) < 85 m(VGS = 6V)  
R
TO-263  
D2-PAK  
D
Top View  
Drain Connected to  
Tab  
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current G  
Pulsed Drain Current C  
Avalanche Current C  
60  
V
V
VGS  
±20  
TC=25°C  
12  
TC=100°C  
ID  
12  
A
IDM  
IAR  
EAR  
30  
12  
A
Repetitive avalanche energy L=0.1mH C  
23  
mJ  
TC=25°C  
50  
PD  
W
Power Dissipation B  
TC=100°C  
25  
2
TA=25°C  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.3  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case B  
Symbol  
Typ  
11.2  
50  
Max  
13.5  
60  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJC  
2.5  
3
Alpha & Omega Semiconductor, Ltd.  

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