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AOB42S60 PDF预览

AOB42S60

更新时间: 2024-11-06 12:51:31
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
6页 258K
描述
600V 37A a MOS Power Transistor

AOB42S60 数据手册

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AOT42S60/AOB42S60  
600V 37A  
α
MOS TM Power Transistor  
General Description  
Product Summary  
VDS @ Tj,max  
IDM  
700V  
166A  
0.109  
40nC  
9.2µJ  
The AOT42S60 & AOB42S60 have been fabricated using  
the advanced αMOSTM high voltage process that is  
designed to deliver high levels of performance and  
robustness in switching applications.  
RDS(ON),max  
Qg,typ  
By providing low RDS(on), Qg and EOSS along with  
guaranteed avalanche capability these devices can be  
adopted quickly into new and existing offline power supply  
designs.  
Eoss @ 400V  
100% UIS Tested  
100% Rg Tested  
For Halogen Free add "L" suffix to part number:  
AOT42S60L & AOB42S60L  
Top View  
TO-263  
D2PAK  
TO-220  
D
S
G
D
G
S
S
G
AOT42S60  
AOB42S60  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
AOT42S60/AOB42S60  
Units  
Drain-Source Voltage  
VDS  
600  
V
Gate-Source Voltage  
VGS  
±30  
37  
V
A
TC=25°C  
Continuous Drain  
Current  
ID  
TC=100°C  
23  
Pulsed Drain Current C  
Avalanche Current C  
IDM  
IAR  
166  
11  
A
mJ  
Repetitive avalanche energy C  
Single pulsed avalanche energy G  
TC=25°C  
EAR  
EAS  
234  
1345  
417  
mJ  
W
W/ oC  
PD  
Power Dissipation B  
Derate above 25oC  
3.3  
100  
20  
MOSFET dv/dt ruggedness  
Peak diode recovery dv/dt H  
dv/dt  
V/ns  
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds J  
Thermal Characteristics  
TL  
300  
°C  
Parameter  
Symbol  
AOT42S60/AOB42S60  
Units  
Maximum Junction-to-Ambient A,D  
RθJA  
65  
°C/W  
Maximum Case-to-sink A  
RθCS  
RθJC  
0.5  
0.3  
°C/W  
°C/W  
Maximum Junction-to-Case  
Rev3: Nov 2012  
www.aosmd.com  
Page 1 of 6  

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